Vishay Siliconix - SI1450DH-T1-GE3

KEY Part #: K6406192

[1404PC Stock]


    Nimewo Pati:
    SI1450DH-T1-GE3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 8V 4.53A SC70-6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - DIACs, SIDACs ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI1450DH-T1-GE3 electronic components. SI1450DH-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1450DH-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI1450DH-T1-GE3 Atribi pwodwi yo

    Nimewo Pati : SI1450DH-T1-GE3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 8V 4.53A SC70-6
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 8V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.53A (Ta), 6.04A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 47 mOhm @ 4A, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 7.05nC @ 5V
    Vgs (Max) : ±5V
    Antre kapasite (Ciss) (Max) @ Vds : 535pF @ 4V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.56W (Ta), 2.78W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SC-70-6 (SOT-363)
    Pake / Ka : 6-TSSOP, SC-88, SOT-363