IRL620SPBF Pricing (USD) [38643PC Stock]
- 1 pcs$0.98254
- 10 pcs$0.88721
- 100 pcs$0.71299
- 500 pcs$0.55453
- 1,000 pcs$0.45948
- Nimewo Pati:
- IRL620SPBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 200V 5.2A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRL620SPBF electronic components. IRL620SPBF can be shipped within 24 hours after order. If you have any demands for IRL620SPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL620SPBF Atribi pwodwi yo
Nimewo Pati :
IRL620SPBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 200V 5.2A D2PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
800 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
360pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 50W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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