IXYS - IXTH16N20D2

KEY Part #: K6398269

IXTH16N20D2 Pricing (USD) [7565PC Stock]

  • 1 pcs$4.60531
  • 10 pcs$4.14478
  • 25 pcs$3.77645
  • 100 pcs$3.40793
  • 250 pcs$3.13161
  • 500 pcs$2.85530

Nimewo Pati:
IXTH16N20D2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 200V 16A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Tiristors - SCR, Diodes - Zener - Single, Transistors - JFETs, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in IXYS IXTH16N20D2 electronic components. IXTH16N20D2 can be shipped within 24 hours after order. If you have any demands for IXTH16N20D2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH16N20D2 Atribi pwodwi yo

Nimewo Pati : IXTH16N20D2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 200V 16A TO-247
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 73 mOhm @ 8A, 0V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 208nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5500pF @ 25V
Karakteristik FET : Depletion Mode
Disipasyon Pouvwa (Max) : 695W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 (IXTH)
Pake / Ka : TO-247-3