IXTH16N20D2 Pricing (USD) [7565PC Stock]
- 1 pcs$4.60531
- 10 pcs$4.14478
- 25 pcs$3.77645
- 100 pcs$3.40793
- 250 pcs$3.13161
- 500 pcs$2.85530
- Nimewo Pati:
- IXTH16N20D2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 200V 16A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Modil pouvwa chofè and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXTH16N20D2 electronic components. IXTH16N20D2 can be shipped within 24 hours after order. If you have any demands for IXTH16N20D2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH16N20D2 Atribi pwodwi yo
Nimewo Pati :
IXTH16N20D2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 200V 16A TO-247
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
73 mOhm @ 8A, 0V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
208nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5500pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
695W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 (IXTH)
Pake / Ka :
TO-247-3
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