STS9P2UH7 Pricing (USD) [12434PC Stock]
- 2,500 pcs$0.18272
- Nimewo Pati:
- STS9P2UH7
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET P-CH 20V 9A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Tiristors - SCR and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STS9P2UH7 electronic components. STS9P2UH7 can be shipped within 24 hours after order. If you have any demands for STS9P2UH7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STS9P2UH7 Atribi pwodwi yo
Nimewo Pati :
STS9P2UH7
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET P-CH 20V 9A 8-SOIC
Seri :
STripFET™
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
22.5 mOhm @ 4.5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
2390pF @ 16V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.7W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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