ON Semiconductor - NGTB50N65FL2WG

KEY Part #: K6421783

NGTB50N65FL2WG Pricing (USD) [16156PC Stock]

  • 1 pcs$2.55082
  • 150 pcs$2.21073

Nimewo Pati:
NGTB50N65FL2WG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 50A TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - RF and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor NGTB50N65FL2WG electronic components. NGTB50N65FL2WG can be shipped within 24 hours after order. If you have any demands for NGTB50N65FL2WG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTB50N65FL2WG Atribi pwodwi yo

Nimewo Pati : NGTB50N65FL2WG
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 50A TO247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 100A
Kouran - Pèseptè batman (Icm) : 200A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 50A
Pouvwa - Max : 417W
Oblije chanje enèji : 1.5mJ (on), 460µJ (off)
Kalite Antre : Standard
Gate chaje : 220nC
Td (on / off) @ 25 ° C : 100ns/237ns
Kondisyon egzamen an : 400V, 50A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 94ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247-3