SIR826DP-T1-GE3 Pricing (USD) [62109PC Stock]
- 1 pcs$0.62955
- 3,000 pcs$0.58983
- Nimewo Pati:
- SIR826DP-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 80V 60A PPAK SO-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIR826DP-T1-GE3 electronic components. SIR826DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIR826DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIR826DP-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIR826DP-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 80V 60A PPAK SO-8
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2900pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
6.25W (Ta), 104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SO-8
Pake / Ka :
PowerPAK® SO-8
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