IXYS - IXKC40N60C

KEY Part #: K6396227

IXKC40N60C Pricing (USD) [8899PC Stock]

  • 1 pcs$5.11943
  • 50 pcs$5.09396

Nimewo Pati:
IXKC40N60C
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 600V 28A ISOPLUS220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Diodes - Zener - Single and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in IXYS IXKC40N60C electronic components. IXKC40N60C can be shipped within 24 hours after order. If you have any demands for IXKC40N60C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXKC40N60C Atribi pwodwi yo

Nimewo Pati : IXKC40N60C
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 600V 28A ISOPLUS220
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 28A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 95 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs : 230nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4800pF @ 25V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : ISOPLUS220™
Pake / Ka : ISOPLUS220™