CSD23280F3T Pricing (USD) [621818PC Stock]
- 1 pcs$0.05948
- 250 pcs$0.05023
- 1,250 pcs$0.02326
- Nimewo Pati:
- CSD23280F3T
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET P-CH 12V 1.8A PICOSTAR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - JFETs, Diodes - Rèkteur - Single and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD23280F3T electronic components. CSD23280F3T can be shipped within 24 hours after order. If you have any demands for CSD23280F3T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD23280F3T Atribi pwodwi yo
Nimewo Pati :
CSD23280F3T
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET P-CH 12V 1.8A PICOSTAR
Seri :
FemtoFET™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
116 mOhm @ 400mA, 4.5V
Vgs (th) (Max) @ Id :
0.95V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.23nC @ 4.5V
Vgs (Max) :
-6V
Antre kapasite (Ciss) (Max) @ Vds :
234pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
3-PICOSTAR
Pake / Ka :
3-XFDFN
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