IXTP36N30P Pricing (USD) [27833PC Stock]
- 1 pcs$1.70110
- 10 pcs$1.52041
- 100 pcs$1.24674
- 500 pcs$0.95778
- 1,000 pcs$0.80777
- Nimewo Pati:
- IXTP36N30P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 300V 36A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - RF, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS IXTP36N30P electronic components. IXTP36N30P can be shipped within 24 hours after order. If you have any demands for IXTP36N30P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP36N30P Atribi pwodwi yo
Nimewo Pati :
IXTP36N30P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 300V 36A TO-220
Seri :
PolarHT™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
110 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2250pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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