Global Power Technologies Group - GP2M007A065HG

KEY Part #: K6403896

[2199PC Stock]


    Nimewo Pati:
    GP2M007A065HG
    Manifakti:
    Global Power Technologies Group
    Detaye deskripsyon:
    MOSFET N-CH 650V 6.5A TO220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Diodes - RF and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in Global Power Technologies Group GP2M007A065HG electronic components. GP2M007A065HG can be shipped within 24 hours after order. If you have any demands for GP2M007A065HG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GP2M007A065HG Atribi pwodwi yo

    Nimewo Pati : GP2M007A065HG
    Manifakti : Global Power Technologies Group
    Deskripsyon : MOSFET N-CH 650V 6.5A TO220
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 650V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.5A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 3.25A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 22nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 1072pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 120W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220
    Pake / Ka : TO-220-3

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