Infineon Technologies - IPI60R280C6XKSA1

KEY Part #: K6417522

IPI60R280C6XKSA1 Pricing (USD) [33639PC Stock]

  • 1 pcs$1.06615
  • 10 pcs$0.96247
  • 100 pcs$0.77353
  • 500 pcs$0.60162
  • 1,000 pcs$0.49848

Nimewo Pati:
IPI60R280C6XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 600V 13.8A TO262.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Diodes - Rèkteur - Single, Diodes - RF, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI60R280C6XKSA1 Atribi pwodwi yo

Nimewo Pati : IPI60R280C6XKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 600V 13.8A TO262
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 280 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 430µA
Chaje Gate (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 950pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 104W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO262-3
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA