EPC - EPC2012C

KEY Part #: K6417098

EPC2012C Pricing (USD) [78588PC Stock]

  • 1 pcs$0.56967
  • 1,000 pcs$0.56684

Nimewo Pati:
EPC2012C
Manifakti:
EPC
Detaye deskripsyon:
GANFET TRANS 200V 5A BUMPED DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Transistors - Pwogramasyon Unijunction and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in EPC EPC2012C electronic components. EPC2012C can be shipped within 24 hours after order. If you have any demands for EPC2012C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2012C Atribi pwodwi yo

Nimewo Pati : EPC2012C
Manifakti : EPC
Deskripsyon : GANFET TRANS 200V 5A BUMPED DIE
Seri : eGaN®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 1.3nC @ 5V
Vgs (Max) : +6V, -4V
Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Die Outline (4-Solder Bar)
Pake / Ka : Die
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