Nexperia USA Inc. - PH20100S,115

KEY Part #: K6411418

[13798PC Stock]


    Nimewo Pati:
    PH20100S,115
    Manifakti:
    Nexperia USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 100V 34.3A LFPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in Nexperia USA Inc. PH20100S,115 electronic components. PH20100S,115 can be shipped within 24 hours after order. If you have any demands for PH20100S,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PH20100S,115 Atribi pwodwi yo

    Nimewo Pati : PH20100S,115
    Manifakti : Nexperia USA Inc.
    Deskripsyon : MOSFET N-CH 100V 34.3A LFPAK
    Seri : TrenchMOS™
    Estati Pati : Discontinued at Digi-Key
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 34.3A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 23 mOhm @ 10A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 39nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2264pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 62.5W (Tc)
    Operating Tanperati : -
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : LFPAK56, Power-SO8
    Pake / Ka : SC-100, SOT-669

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