IXYS - IXGH28N60B3D1

KEY Part #: K6422027

IXGH28N60B3D1 Pricing (USD) [16632PC Stock]

  • 1 pcs$2.60900
  • 30 pcs$2.59602

Nimewo Pati:
IXGH28N60B3D1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 600V 66A 190W TO247AD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Transistors - JFETs, Tiristors - SCR - Modil yo and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in IXYS IXGH28N60B3D1 electronic components. IXGH28N60B3D1 can be shipped within 24 hours after order. If you have any demands for IXGH28N60B3D1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGH28N60B3D1 Atribi pwodwi yo

Nimewo Pati : IXGH28N60B3D1
Manifakti : IXYS
Deskripsyon : IGBT 600V 66A 190W TO247AD
Seri : PolarHV™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 66A
Kouran - Pèseptè batman (Icm) : 150A
Vce (sou) (Max) @ Vge, Ic : 1.8V @ 15V, 24A
Pouvwa - Max : 190W
Oblije chanje enèji : 340µJ (on), 650µJ (off)
Kalite Antre : Standard
Gate chaje : 62nC
Td (on / off) @ 25 ° C : 19ns/125ns
Kondisyon egzamen an : 400V, 24A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 25ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247AD (IXGH)