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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. SFT1431-W

ON Semiconductor - SFT1431-W

KEY Part #: K6420678

SFT1431-W Pricing (USD) [230030PC Stock]

  • 1 pcs$0.17347
  • 1,500 pcs$0.17261
Nimewo Pati:
SFT1431-W
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 35V 11A TP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor SFT1431-W electronic components. SFT1431-W can be shipped within 24 hours after order. If you have any demands for SFT1431-W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SFT1431-W Atribi pwodwi yo

Nimewo Pati : SFT1431-W
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 35V 11A TP
Seri : -
Estati Pati : Last Time Buy
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 35V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 25 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id : 2.6V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 17.3nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 960pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Ta), 15W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : IPAK/TP
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

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