SIZF920DT-T1-GE3 Pricing (USD) [102903PC Stock]
- 1 pcs$0.37998
- Nimewo Pati:
- SIZF920DT-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET DL N-CH 30V POWERPAIR 6X5.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIZF920DT-T1-GE3 electronic components. SIZF920DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF920DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF920DT-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIZF920DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET DL N-CH 30V POWERPAIR 6X5
Seri :
TrenchFET® Gen IV
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual), Schottky
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
RD sou (Max) @ Id, Vgs :
3.07 mOhm @ 10A, 10V, 1.05 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA, 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
29nC @ 10V, 125nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1300pF @ 15V, 5230pF @ 15V
Pouvwa - Max :
3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerWDFN
Pake Aparèy Founisè :
8-PowerPair® (6x5)
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