EPC2103ENGRT Pricing (USD) [19462PC Stock]
- 1 pcs$2.34097
- 500 pcs$2.32932
- Nimewo Pati:
- EPC2103ENGRT
- Manifakti:
- EPC
- Detaye deskripsyon:
- GANFET TRANS SYM HALF BRDG 80V.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo, Diodes - RF and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in EPC EPC2103ENGRT electronic components. EPC2103ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2103ENGRT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2103ENGRT Atribi pwodwi yo
Nimewo Pati :
EPC2103ENGRT
Manifakti :
EPC
Deskripsyon :
GANFET TRANS SYM HALF BRDG 80V
Seri :
eGaN®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
23A
RD sou (Max) @ Id, Vgs :
5.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 7mA
Chaje Gate (Qg) (Max) @ Vgs :
6.5nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
7600pF @ 40V
Pouvwa - Max :
-
Operating Tanperati :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Die
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