Infineon Technologies - IRF5305STRLPBF

KEY Part #: K6407448

IRF5305STRLPBF Pricing (USD) [116452PC Stock]

  • 1 pcs$0.31762
  • 800 pcs$0.30483

Nimewo Pati:
IRF5305STRLPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET P-CH 55V 31A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF5305STRLPBF Atribi pwodwi yo

Nimewo Pati : IRF5305STRLPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET P-CH 55V 31A D2PAK
Seri : HEXFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 31A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 60 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1200pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.8W (Ta), 110W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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