Vishay Siliconix - IRFU210PBF

KEY Part #: K6393120

IRFU210PBF Pricing (USD) [59949PC Stock]

  • 1 pcs$0.57280
  • 10 pcs$0.50757
  • 100 pcs$0.40113
  • 500 pcs$0.29427
  • 1,000 pcs$0.23232

Nimewo Pati:
IRFU210PBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 200V 2.6A I-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRFU210PBF electronic components. IRFU210PBF can be shipped within 24 hours after order. If you have any demands for IRFU210PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFU210PBF Atribi pwodwi yo

Nimewo Pati : IRFU210PBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 200V 2.6A I-PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 1.6A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 25W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-251AA
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA