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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

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  1. Lakay
  2. Pwodwi yo
  3. DRAM
  4. DDR3
  5. K4B4G1646E-BYMA

Samsung Semiconductor - K4B4G1646E-BYMA

KEY Part #: K7359703

[19442PC Stock]

    Nimewo Pati:
    K4B4G1646E-BYMA
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: LPDDR5, HBM Flarebolt, LPDDR3, DDR3, MODULE, LPDDR4, GDDR6 and LPDDR4X ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor K4B4G1646E-BYMA electronic components. K4B4G1646E-BYMA can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-BYMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-BYMA Atribi pwodwi yo

    Nimewo Pati : K4B4G1646E-BYMA
    Manifakti : Samsung Semiconductor
    Deskripsyon : 4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Seri : DDR3
    dansite : 4 Gb
    Org. : 512M x 8
    vitès : 1866 Mbps
    Voltage : 1.35 V
    Tanperatur. : 0 ~ 85 °C
    Pake : 96FBGA
    pwodwi dènye nouvèl : Mass Production

    Dènye nouvèl

    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Inside the building blocks of the 5G future
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Mission Peak Reference Server System for NGSFF SSD
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
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