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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

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  1. Lakay
  2. Pwodwi yo
  3. DRAM
  4. DDR3
  5. K4B4G1646E-YCMA

Samsung Semiconductor - K4B4G1646E-YCMA

KEY Part #: K7359705

[17661PC Stock]

    Nimewo Pati:
    K4B4G1646E-YCMA
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: HBM Aquabolt, HBM Flarebolt, LPDDR3, SLC Nand, MODULE, DDR4, GDDR6 and LPDDR4 ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor K4B4G1646E-YCMA electronic components. K4B4G1646E-YCMA can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-YCMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-YCMA Atribi pwodwi yo

    Nimewo Pati : K4B4G1646E-YCMA
    Manifakti : Samsung Semiconductor
    Deskripsyon : 4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Seri : DDR3
    dansite : 4 Gb
    Org. : 512M x 8
    vitès : 1866 Mbps
    Voltage : 1.35 V
    Tanperatur. : 0 ~ 85 °C
    Pake : 96FBGA
    pwodwi dènye nouvèl : Mass Production

    Dènye nouvèl

    5G and Memory - from Connected Thinking to Connected Living
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Unlocking the Power of Cloud Computing
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Inside the building blocks of the 5G future
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
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