IXYS - IXKP20N60C5

KEY Part #: K6417022

IXKP20N60C5 Pricing (USD) [23219PC Stock]

  • 1 pcs$2.05135
  • 50 pcs$2.04115

Nimewo Pati:
IXKP20N60C5
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 600V 20A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Tiristors - SCR, Tiristors - SCR - Modil yo and Diodes - RF ...
Avantaj konpetitif:
We specialize in IXYS IXKP20N60C5 electronic components. IXKP20N60C5 can be shipped within 24 hours after order. If you have any demands for IXKP20N60C5, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXKP20N60C5 Atribi pwodwi yo

Nimewo Pati : IXKP20N60C5
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 600V 20A TO220AB
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 200 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1.1mA
Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1520pF @ 100V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3