SUG80050E-GE3 Pricing (USD) [16406PC Stock]
- 1 pcs$2.51199
- 500 pcs$1.48832
- Nimewo Pati:
- SUG80050E-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 150V 100A TO247AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SUG80050E-GE3 electronic components. SUG80050E-GE3 can be shipped within 24 hours after order. If you have any demands for SUG80050E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUG80050E-GE3 Atribi pwodwi yo
Nimewo Pati :
SUG80050E-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 150V 100A TO247AC
Seri :
ThunderFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
7.5V, 10V
RD sou (Max) @ Id, Vgs :
5.4 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
165nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
6250pF @ 75V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AC
Pake / Ka :
TO-247-3
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