Toshiba Semiconductor and Storage - SSM3K17FU,LF

KEY Part #: K6419056

SSM3K17FU,LF Pricing (USD) [1694228PC Stock]

  • 1 pcs$0.02413
  • 3,000 pcs$0.02401

Nimewo Pati:
SSM3K17FU,LF
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 50V 0.1A USM.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - JFETs, Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM3K17FU,LF electronic components. SSM3K17FU,LF can be shipped within 24 hours after order. If you have any demands for SSM3K17FU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3K17FU,LF Atribi pwodwi yo

Nimewo Pati : SSM3K17FU,LF
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 50V 0.1A USM
Seri : π-MOSV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 50V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4V
RD sou (Max) @ Id, Vgs : 20 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id : 1.5V @ 1µA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±7V
Antre kapasite (Ciss) (Max) @ Vds : 7pF @ 3V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 150mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : USM
Pake / Ka : SC-70, SOT-323

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