IXTA4N150HV Pricing (USD) [4521PC Stock]
- 1 pcs$10.54007
- 10 pcs$9.58104
- 100 pcs$7.74662
- Nimewo Pati:
- IXTA4N150HV
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1.5KV 4A TO263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - Rèkteur - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA4N150HV electronic components. IXTA4N150HV can be shipped within 24 hours after order. If you have any demands for IXTA4N150HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA4N150HV Atribi pwodwi yo
Nimewo Pati :
IXTA4N150HV
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1.5KV 4A TO263
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
44.5nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1576pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
280W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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