Infineon Technologies - BUZ73AE3046XK

KEY Part #: K6409903

[122PC Stock]


    Nimewo Pati:
    BUZ73AE3046XK
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 200V 5.5A TO-220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal and Transistors - IGBTs - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BUZ73AE3046XK electronic components. BUZ73AE3046XK can be shipped within 24 hours after order. If you have any demands for BUZ73AE3046XK, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BUZ73AE3046XK Atribi pwodwi yo

    Nimewo Pati : BUZ73AE3046XK
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 200V 5.5A TO-220
    Seri : SIPMOS®
    Estati Pati : Discontinued at Digi-Key
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.5A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 600 mOhm @ 4.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 530pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 40W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : PG-TO220-3
    Pake / Ka : TO-220-3