Infineon Technologies - IGW30N100TFKSA1

KEY Part #: K6423306

IGW30N100TFKSA1 Pricing (USD) [9698PC Stock]

  • 1 pcs$2.44148
  • 10 pcs$2.19292
  • 100 pcs$1.79656
  • 500 pcs$1.52937
  • 1,000 pcs$1.28983

Nimewo Pati:
IGW30N100TFKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 1000V 60A 412W TO247-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - IGBTs - Single and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in Infineon Technologies IGW30N100TFKSA1 electronic components. IGW30N100TFKSA1 can be shipped within 24 hours after order. If you have any demands for IGW30N100TFKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IGW30N100TFKSA1 Atribi pwodwi yo

Nimewo Pati : IGW30N100TFKSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 1000V 60A 412W TO247-3
Seri : TrenchStop®
Estati Pati : Obsolete
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1000V
Kouran - Pèseptè (Ic) (Max) : 60A
Kouran - Pèseptè batman (Icm) : 90A
Vce (sou) (Max) @ Vge, Ic : 1.9V @ 15V, 30A
Pouvwa - Max : 412W
Oblije chanje enèji : 3.8mJ
Kalite Antre : Standard
Gate chaje : 217nC
Td (on / off) @ 25 ° C : 33ns/535ns
Kondisyon egzamen an : 600V, 30A, 16 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : PG-TO247-3