IXYS - IXFH23N80Q

KEY Part #: K6409234

IXFH23N80Q Pricing (USD) [6887PC Stock]

  • 1 pcs$6.61565
  • 30 pcs$6.58274

Nimewo Pati:
IXFH23N80Q
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 800V 23A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXFH23N80Q electronic components. IXFH23N80Q can be shipped within 24 hours after order. If you have any demands for IXFH23N80Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH23N80Q Atribi pwodwi yo

Nimewo Pati : IXFH23N80Q
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 800V 23A TO-247
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 420 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs : 130nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4900pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD (IXFH)
Pake / Ka : TO-247-3