SCT2H12NYTB Pricing (USD) [25402PC Stock]
- 1 pcs$1.79360
- 400 pcs$1.78468
- Nimewo Pati:
- SCT2H12NYTB
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- 1700V 1.2 OHM 4A SIC FET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - SCR, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor SCT2H12NYTB electronic components. SCT2H12NYTB can be shipped within 24 hours after order. If you have any demands for SCT2H12NYTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT2H12NYTB Atribi pwodwi yo
Nimewo Pati :
SCT2H12NYTB
Manifakti :
Rohm Semiconductor
Deskripsyon :
1700V 1.2 OHM 4A SIC FET
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
1.5 Ohm @ 1.1A, 18V
Vgs (th) (Max) @ Id :
4V @ 410µA
Chaje Gate (Qg) (Max) @ Vgs :
14nC @ 18V
Vgs (Max) :
+22V, -6V
Antre kapasite (Ciss) (Max) @ Vds :
184pF @ 800V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
44W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-268
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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