IXYH30N120C3D1 Pricing (USD) [9806PC Stock]
- 1 pcs$4.42446
- 60 pcs$4.40245
- Nimewo Pati:
- IXYH30N120C3D1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 1200V 66A 416W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in IXYS IXYH30N120C3D1 electronic components. IXYH30N120C3D1 can be shipped within 24 hours after order. If you have any demands for IXYH30N120C3D1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXYH30N120C3D1 Atribi pwodwi yo
Nimewo Pati :
IXYH30N120C3D1
Manifakti :
IXYS
Deskripsyon :
IGBT 1200V 66A 416W TO247
Seri :
GenX3™, XPT™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
66A
Kouran - Pèseptè batman (Icm) :
133A
Vce (sou) (Max) @ Vge, Ic :
3.3V @ 15V, 30A
Pouvwa - Max :
416W
Oblije chanje enèji :
2.6mJ (on), 1.1mJ (off)
Kalite Antre :
Standard
Gate chaje :
69nC
Td (on / off) @ 25 ° C :
19ns/130ns
Kondisyon egzamen an :
600V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
195ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247 (IXYH)
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