IXYS - IXYH30N120C3D1

KEY Part #: K6422037

IXYH30N120C3D1 Pricing (USD) [9806PC Stock]

  • 1 pcs$4.42446
  • 60 pcs$4.40245

Nimewo Pati:
IXYH30N120C3D1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 1200V 66A 416W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - RF, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXYH30N120C3D1 electronic components. IXYH30N120C3D1 can be shipped within 24 hours after order. If you have any demands for IXYH30N120C3D1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXYH30N120C3D1 Atribi pwodwi yo

Nimewo Pati : IXYH30N120C3D1
Manifakti : IXYS
Deskripsyon : IGBT 1200V 66A 416W TO247
Seri : GenX3™, XPT™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 66A
Kouran - Pèseptè batman (Icm) : 133A
Vce (sou) (Max) @ Vge, Ic : 3.3V @ 15V, 30A
Pouvwa - Max : 416W
Oblije chanje enèji : 2.6mJ (on), 1.1mJ (off)
Kalite Antre : Standard
Gate chaje : 69nC
Td (on / off) @ 25 ° C : 19ns/130ns
Kondisyon egzamen an : 600V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 195ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247 (IXYH)