CSD22202W15 Pricing (USD) [408211PC Stock]
- 1 pcs$0.09061
- 3,000 pcs$0.08970
- Nimewo Pati:
- CSD22202W15
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET P-CH 8V 10A 9DSBGA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD22202W15 electronic components. CSD22202W15 can be shipped within 24 hours after order. If you have any demands for CSD22202W15, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD22202W15 Atribi pwodwi yo
Nimewo Pati :
CSD22202W15
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET P-CH 8V 10A 9DSBGA
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
12.2 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Vgs (Max) :
-6V
Antre kapasite (Ciss) (Max) @ Vds :
1390pF @ 4V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.5W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
9-DSBGA
Pake / Ka :
9-UFBGA, DSBGA
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