2SJ649-AZ Pricing (USD) [53747PC Stock]
- 1 pcs$0.79857
- Nimewo Pati:
- 2SJ649-AZ
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET P-CH 60V 20A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America 2SJ649-AZ electronic components. 2SJ649-AZ can be shipped within 24 hours after order. If you have any demands for 2SJ649-AZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SJ649-AZ Atribi pwodwi yo
Nimewo Pati :
2SJ649-AZ
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET P-CH 60V 20A TO-220
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
48 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1900pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta), 25W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220 Isolated Tab
Pake / Ka :
TO-220-3 Isolated Tab
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