FCB110N65F Pricing (USD) [33558PC Stock]
- 1 pcs$1.88106
- 800 pcs$1.87170
- Nimewo Pati:
- FCB110N65F
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 650V 35A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FCB110N65F electronic components. FCB110N65F can be shipped within 24 hours after order. If you have any demands for FCB110N65F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCB110N65F Atribi pwodwi yo
Nimewo Pati :
FCB110N65F
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 650V 35A D2PAK
Seri :
FRFET®, SuperFET® II
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
35A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
110 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 3.5mA
Chaje Gate (Qg) (Max) @ Vgs :
145nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4895pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
357W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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