C2M0080170P Pricing (USD) [2568PC Stock]
- 1 pcs$16.86412
- Nimewo Pati:
- C2M0080170P
- Manifakti:
- Cree/Wolfspeed
- Detaye deskripsyon:
- ZFET SIC DMOSFET 1700V VDS RDS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Cree/Wolfspeed C2M0080170P electronic components. C2M0080170P can be shipped within 24 hours after order. If you have any demands for C2M0080170P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
C2M0080170P Atribi pwodwi yo
Nimewo Pati :
C2M0080170P
Manifakti :
Cree/Wolfspeed
Deskripsyon :
ZFET SIC DMOSFET 1700V VDS RDS
Seri :
C2M™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
125 mOhm @ 28A, 20V
Vgs (th) (Max) @ Id :
4V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs :
120nC @ 20V
Vgs (Max) :
+25V, -10V
Antre kapasite (Ciss) (Max) @ Vds :
2250pF @ 1000V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
277W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-4L
Pake / Ka :
TO-247-4
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