SQD50N10-8M9L_GE3 Pricing (USD) [121110PC Stock]
- 1 pcs$0.30541
- 2,000 pcs$0.28504
- Nimewo Pati:
- SQD50N10-8M9L_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CHAN 100V TO252.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Tiristors - SCR, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQD50N10-8M9L_GE3 electronic components. SQD50N10-8M9L_GE3 can be shipped within 24 hours after order. If you have any demands for SQD50N10-8M9L_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQD50N10-8M9L_GE3 Atribi pwodwi yo
Nimewo Pati :
SQD50N10-8M9L_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHAN 100V TO252
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
8.9 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2950pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
136W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252AA
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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