[12988PC Stock]
- Nimewo Pati:
- FDFS2P102A
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 20V 3.3A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - JFETs, Tiristors - SCR, Modil pouvwa chofè, Diodes - RF and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDFS2P102A electronic components. FDFS2P102A can be shipped within 24 hours after order. If you have any demands for FDFS2P102A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDFS2P102A Atribi pwodwi yo
Nimewo Pati :
FDFS2P102A
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 3.3A 8-SOIC
Seri :
PowerTrench®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
125 mOhm @ 3.3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
182pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
900mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOIC
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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