Nexperia USA Inc. - PMCXB900UEZ

KEY Part #: K6525123

PMCXB900UEZ Pricing (USD) [459564PC Stock]

  • 1 pcs$0.08242
  • 5,000 pcs$0.08201

Nimewo Pati:
PMCXB900UEZ
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N/P-CH 20V 0.6A/0.5A 6DFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Modil pouvwa chofè and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PMCXB900UEZ electronic components. PMCXB900UEZ can be shipped within 24 hours after order. If you have any demands for PMCXB900UEZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMCXB900UEZ Atribi pwodwi yo

Nimewo Pati : PMCXB900UEZ
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N and P-Channel Complementary
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 600mA, 500mA
RD sou (Max) @ Id, Vgs : 620 mOhm @ 600mA, 4.5V
Vgs (th) (Max) @ Id : 950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.7nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 21.3pF @ 10V
Pouvwa - Max : 265mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-XFDFN Exposed Pad
Pake Aparèy Founisè : DFN1010B-6