PMDXB600UNEZ Pricing (USD) [451031PC Stock]
- 1 pcs$0.08242
- 5,000 pcs$0.08201
- Nimewo Pati:
- PMDXB600UNEZ
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 0.6A 6DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMDXB600UNEZ electronic components. PMDXB600UNEZ can be shipped within 24 hours after order. If you have any demands for PMDXB600UNEZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDXB600UNEZ Atribi pwodwi yo
Nimewo Pati :
PMDXB600UNEZ
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2N-CH 20V 0.6A 6DFN
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
600mA
RD sou (Max) @ Id, Vgs :
620 mOhm @ 600mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.7nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
21.3pF @ 10V
Pouvwa - Max :
265mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-XFDFN Exposed Pad
Pake Aparèy Founisè :
DFN1010B-6
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