[2154PC Stock]
- Nimewo Pati:
- RJK2009DPM-00#T0
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 200V 40A TO3PFM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America RJK2009DPM-00#T0 electronic components. RJK2009DPM-00#T0 can be shipped within 24 hours after order. If you have any demands for RJK2009DPM-00#T0, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK2009DPM-00#T0 Atribi pwodwi yo
Nimewo Pati :
RJK2009DPM-00#T0
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 200V 40A TO3PFM
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
36 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
60W (Tc)
Operating Tanperati :
-
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3PFM
Pake / Ka :
TO-3PFM, SC-93-3
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