[640PC Stock]
- Nimewo Pati:
- RRS125N03TB1
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 30V 12.5A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RRS125N03TB1 electronic components. RRS125N03TB1 can be shipped within 24 hours after order. If you have any demands for RRS125N03TB1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RRS125N03TB1 Atribi pwodwi yo
Nimewo Pati :
RRS125N03TB1
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 30V 12.5A 8-SOIC
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
10 mOhm @ 12.5A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
40.5nC @ 15V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
2300pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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