[13640PC Stock]
- Nimewo Pati:
- IRFU120ZPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 8.7A I-PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFU120ZPBF electronic components. IRFU120ZPBF can be shipped within 24 hours after order. If you have any demands for IRFU120ZPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFU120ZPBF Atribi pwodwi yo
Nimewo Pati :
IRFU120ZPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 8.7A I-PAK
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
190 mOhm @ 5.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
310pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
35W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
IPAK (TO-251)
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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