Infineon Technologies - IRLR8113TRPBF

KEY Part #: K6411918

[13624PC Stock]


    Nimewo Pati:
    IRLR8113TRPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 30V 94A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRLR8113TRPBF electronic components. IRLR8113TRPBF can be shipped within 24 hours after order. If you have any demands for IRLR8113TRPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRLR8113TRPBF Atribi pwodwi yo

    Nimewo Pati : IRLR8113TRPBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 30V 94A DPAK
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 94A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 6 mOhm @ 15A, 10V
    Vgs (th) (Max) @ Id : 2.25V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 32nC @ 4.5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2920pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 89W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D-Pak
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63