IXFP4N100Q Pricing (USD) [15691PC Stock]
- 1 pcs$3.02320
- 10 pcs$2.69885
- 100 pcs$2.21298
- 500 pcs$1.79197
- 1,000 pcs$1.51129
- Nimewo Pati:
- IXFP4N100Q
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 4A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Diodes - RF, Diodes - Zener - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in IXYS IXFP4N100Q electronic components. IXFP4N100Q can be shipped within 24 hours after order. If you have any demands for IXFP4N100Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP4N100Q Atribi pwodwi yo
Nimewo Pati :
IXFP4N100Q
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 4A TO-220
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1050pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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