[8392PC Stock]
- Nimewo Pati:
- IRLR120TRR
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 100V 7.7A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRLR120TRR electronic components. IRLR120TRR can be shipped within 24 hours after order. If you have any demands for IRLR120TRR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR120TRR Atribi pwodwi yo
Nimewo Pati :
IRLR120TRR
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 100V 7.7A DPAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 5V
RD sou (Max) @ Id, Vgs :
270 mOhm @ 4.6A, 5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
490pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 42W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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