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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDI045N10A-F102

ON Semiconductor - FDI045N10A-F102

KEY Part #: K6416826

FDI045N10A-F102 Pricing (USD) [20242PC Stock]

  • 1 pcs$2.03603
Nimewo Pati:
FDI045N10A-F102
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 120A I2PAK-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDI045N10A-F102 electronic components. FDI045N10A-F102 can be shipped within 24 hours after order. If you have any demands for FDI045N10A-F102, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDI045N10A-F102 Atribi pwodwi yo

Nimewo Pati : FDI045N10A-F102
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 120A I2PAK-3
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5270pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 263W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I2PAK (TO-262)
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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