Vishay Siliconix - IRL630STRRPBF

KEY Part #: K6393081

IRL630STRRPBF Pricing (USD) [59860PC Stock]

  • 1 pcs$0.65320
  • 800 pcs$0.61766

Nimewo Pati:
IRL630STRRPBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 200V 9A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Diodes - RF and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRL630STRRPBF electronic components. IRL630STRRPBF can be shipped within 24 hours after order. If you have any demands for IRL630STRRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRL630STRRPBF Atribi pwodwi yo

Nimewo Pati : IRL630STRRPBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 200V 9A D2PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 5V
RD sou (Max) @ Id, Vgs : 400 mOhm @ 5.4A, 5V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.1W (Ta), 74W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB