APT25GP90BDQ1G Pricing (USD) [9614PC Stock]
- 1 pcs$4.28639
- 57 pcs$4.28639
- Nimewo Pati:
- APT25GP90BDQ1G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- IGBT 900V 72A 417W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT25GP90BDQ1G electronic components. APT25GP90BDQ1G can be shipped within 24 hours after order. If you have any demands for APT25GP90BDQ1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT25GP90BDQ1G Atribi pwodwi yo
Nimewo Pati :
APT25GP90BDQ1G
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 900V 72A 417W TO247
Seri :
POWER MOS 7®
Estati Pati :
Not For New Designs
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
900V
Kouran - Pèseptè (Ic) (Max) :
72A
Kouran - Pèseptè batman (Icm) :
110A
Vce (sou) (Max) @ Vge, Ic :
3.9V @ 15V, 25A
Pouvwa - Max :
417W
Oblije chanje enèji :
370µJ (off)
Kalite Antre :
Standard
Gate chaje :
110nC
Td (on / off) @ 25 ° C :
13ns/55ns
Kondisyon egzamen an :
600V, 40A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247 [B]
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