Renesas Electronics America - UPA2630T1R-E2-AX

KEY Part #: K6393835

UPA2630T1R-E2-AX Pricing (USD) [439356PC Stock]

  • 1 pcs$0.09948
  • 3,000 pcs$0.09899

Nimewo Pati:
UPA2630T1R-E2-AX
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET P-CH 12V 7A 6SON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Renesas Electronics America UPA2630T1R-E2-AX electronic components. UPA2630T1R-E2-AX can be shipped within 24 hours after order. If you have any demands for UPA2630T1R-E2-AX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UPA2630T1R-E2-AX Atribi pwodwi yo

Nimewo Pati : UPA2630T1R-E2-AX
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET P-CH 12V 7A 6SON
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 59 mOhm @ 3.5A, 1.8V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 11.3nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 1260pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-HUSON (2x2)
Pake / Ka : 6-PowerWDFN