SISS71DN-T1-GE3 Pricing (USD) [178202PC Stock]
- 1 pcs$0.20756
- 3,000 pcs$0.19490
- Nimewo Pati:
- SISS71DN-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 100V 23A 1212-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SISS71DN-T1-GE3 electronic components. SISS71DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS71DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS71DN-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SISS71DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 100V 23A 1212-8
Seri :
ThunderFET®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
23A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
59 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1050pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
57W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 1212-8S (3.3x3.3)
Pake / Ka :
8-PowerVDFN
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