Diodes Incorporated - ZXMN3B14FTA

KEY Part #: K6419986

ZXMN3B14FTA Pricing (USD) [378276PC Stock]

  • 1 pcs$0.09827
  • 3,000 pcs$0.09778

Nimewo Pati:
ZXMN3B14FTA
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 30V 2.9A SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè and Diodes - RF ...
Avantaj konpetitif:
We specialize in Diodes Incorporated ZXMN3B14FTA electronic components. ZXMN3B14FTA can be shipped within 24 hours after order. If you have any demands for ZXMN3B14FTA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN3B14FTA Atribi pwodwi yo

Nimewo Pati : ZXMN3B14FTA
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 30V 2.9A SOT23-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 80 mOhm @ 3.1A, 4.5V
Vgs (th) (Max) @ Id : 700mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 6.7nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 568pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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